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portada single electron spin measurements in submicron si mos-fets random telegraph signal, single electron
Type
Physical Book
Publisher
Author
Pages
124
ISBN
3836493756
ISBN13
9783836493758
Categories

single electron spin measurements in submicron si mos-fets random telegraph signal, single electron

Ming Xiao (Author) · vdm verlag · Physical Book

single electron spin measurements in submicron si mos-fets random telegraph signal, single electron - ming xiao

Physical Book

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Synopsis "single electron spin measurements in submicron si mos-fets random telegraph signal, single electron"

presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. for a ...

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